Manganese surface segregation in NiMnSb

Effective surface Debye temperature for NiMnSb.100. epitaxial films

Surface segregation of interstitial manganese in Ga1−xMnxAs studied by hard x-ray photoemission spectroscopy

The effects of low-temperature annealing and oxidation of the dilute magnetic semiconductor Ga1−xMnxAs are studied by photoemission spectroscopy in the hard x-ray regime HAXPES , with special attention to the depth profile of both concentration and chemical state of manganese. Annealing of Ga1−xMnxAs in air at 190 °C for up to 150 h leads to an enrichment of manganese at the surface accompanied...

Excess manganese as the origin of the low-temperature anomaly in NiMnSb

Epitaxial growth and surface properties of half-metal NiMnSb films.

We present, herein, an extended study of the half-Heusler alloy NiMnSb, starting with the deposition technique, continuing with the basic structural and magnetic properties of the thin films, and finishing with the electronic and compositional properties of their surfaces. The experimental methods we apply combine magnetization and magnetoresistivity measurements, atomic force microscopy, ferro...

Surface Segregation in Multicomponent Clusters

Nanostructured materials are not immune from surface segregation, as can be shown for solid samples made from nanosized BaFelz.2xCoxTix019 barium femte particles and a variety of free clusters. Both theory and experiment provide ample demonstration that very limited dimensions of very small clusters does not necessarily impart stability against surface and grain boundary segregation. In fact, w...